RHEED_DIFF_W.tar.gz (143.99 kB)

RHEED intensities from two-dimensional heteroepitaxial nanoscale systems of GaN on an Si surface

Download (143.99 kB)
dataset
posted on 18.07.2019 by Andrzej Daniluk
This paper presents a computer program, which facilitates the calculation of changes the intensity of RHEED oscillations from the heteroepitaxial structures of (0001)GaN films nucleated on a Si surface. The calculations are based on the use of a dynamical diffraction theory and different models of scattering crystal potential. The previous version of this program (AETW_v1_0) may be found at http://dx.doi.org/10.1016/j.cpc.2014.07.003.

History

Licence

Exports

Logo branding

Licence

Exports