RHEED intensities from two-dimensional heteroepitaxial nanoscale systems of GaN on an Si surface
datasetposted on 18.07.2019 by Andrzej Daniluk
Datasets usually provide raw data for analysis. This raw data often comes in spreadsheet form, but can be any collection of data, on which analysis can be performed.
This paper presents a computer program, which facilitates the calculation of changes the intensity of RHEED oscillations from the heteroepitaxial structures of (0001)GaN films nucleated on a Si surface. The calculations are based on the use of a dynamical diffraction theory and different models of scattering crystal potential. The previous version of this program (AETW_v1_0) may be found at http://dx.doi.org/10.1016/j.cpc.2014.07.003.